to-252-2l plastic-encapsulate transistors KTA1042D transistor (pnp) features low collector-emitter saturation voltage applications general purpose application maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo * i c =-1ma ,i e =0 -100 v collector-emitter breakdown voltage v (br) ceo * i c =-50ma, i b =0 -100 v emitter-base breakdown voltage v (br)ebo * i e =-1ma,i c =0 -5 v collector cut-off current i cbo v cb =-100v,i e =0 -100 a emitter cut-off current i ebo v eb =-5v,i c =0 -1 ma h fe(1) v ce =-5v, i c =-1a 70 240 dc current gain h fe(2) v ce =-5v, i c =- 4 a 20 collector-emitter saturation voltage v ce(sat) i c =-4a,i b =-0.4a -2 v base-emitter voltage v be v ce =-5v, i c =-4a -1.5 v transition frequency f t v ce =-5v ,i c =-1a 30 mhz collector output capacitance c ob v cb =-10v ,i e =0,f=1mhz 270 pf * pulse test classification of h fe(1) rank o y range 70-140 120-240 symbol parameter value unit v cbo collector-base voltage -100 v v ceo collector-emitter voltage -100 v v ebo emitter-base voltage -5 v i c collector current -5 a p c collector power dissipation 1.25 w r ja thermal resistance from junction to ambient 100 /w t j junction temperature 150 t stg storage temperature -55~+150 to-252-2l 1. base 2. collector 3. emitter 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
-0.1 -1 -10 10 100 1000 -1e-4 -1e-3 -0.01 -0.1 -1 10 100 1000 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 -1e-4 -1e-3 -0.01 -0.1 -1 -0.1 -1 -1e-4 -1e-3 -0.01 -0.1 -1 -10 -100 -1000 -0 -2 -4 -6 -8 -10 -12 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -0.0 -0.5 -1.0 -1.5 -2.0 -1e-4 -1e-3 -0.01 -0.1 -1 -20 f=1mhz i e =0 / i c =0 t a =25 o c KTA1042D reverse voltage v (v) capacitance c (pf) v cb / v eb c ob / c ib ?? c ib c ob common emitter v ce = -5v -5 t a =100 o c t a =25 o c collector current i c (a) dc current gain h fe i c h fe ?? collector power dissipation p c (w) ambient temperature t a ( ) p c ?? t a -5 collector current i c (a) base-emitter saturation voltage v besat (v) t a =25 t a =100 =10 i c v besat ?? -2 -5 t a =25 t a =100 =10 v cesat ?? i c collector-emitter saturation voltage v cesat (mv) collector current i c (a) common emitter t a =25 -10ma -9ma -8ma -7ma -6ma -5ma -4ma -3ma -2ma i b =-1ma collector-emitter voltage v ce (v) collector current i c (a) static characteristic common emitter v ce =-5v -5 t a =25 t a =100 o c base-emitter voltage v be (v) collector current i c (a) i c ?? v be 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,feb,2012
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